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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma doping source
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论文类型：期刊论文
发表时间：2008-08-11
发表刊物：JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
收录刊物：SCIE、EI、Scopus
卷号：204
期号：1-3
页面范围：481-485
ISSN号：0924-0136
关键字：photoluminescence; metalorganic chemical vapor deposition; zinc oxide films; p-type doping; light-emitting devices
摘要：N-doped ZnO films have been grown on (0 0 0 1) sapphire substrates by a novel low-pressure plasma-assisted metalorganic chemical vapor deposition system using N2O plasma as doping source. X-ray photoelectron spectroscopy analysis confirmed the incorporation of N into the ZnO films. Room temperature p-type conduction was achieved for the N-doped ZnO film at suitable substrate temperatures, with the resistivity of 8.71 Omega cm, hole concentration up to 3.44 x 10(17) cm(-3) and mobility of 2.09 cm(2)/Vs. In the photoluminescence (PL) measurement, a strong near-band-edge emission was observed for both undoped and N-doped films, while the deep-level emission was almost undetectable, which confirmed that the obtained ZnO-based films were well close to stoichiometry and of optically high quality. (C) 2008 Elsevier B.V All rights reserved.