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Indexed by:期刊论文

Date of Publication:2022-06-26

Journal:光学精密工程

Affiliation of Author(s):机械工程学院

Issue:9

Page Number:1361-1365

ISSN No.:1004-924X

Abstract:The experiment of silicon chip bending by a millisecond pulse width Nd:YAG laser was done, and the energy threshold of silicon bending was given. Meanwhile, using the Nd:YAG long pulse laser, the influence of pulse frequency and pulse width on the bending angle was mainly investigated, which could be transformed to the influence of scanning velocity and power intensity on the bending angle. The pulse duty cycle was also used to describe the influence of the energy time distribution on bending. The experimental results indicate that the silicon chip could be bent an angle more than 20° using the Nd:YAG long pulse laser.

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