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Date of Publication:2008-01-01

Journal:光学精密工程

Affiliation of Author(s):机械工程学院

Issue:10

Page Number:1928-1935

ISSN No.:1004-924X

Abstract:By considering thermal absorption factors changed with temperature, the laser bending experiments and simulations were conducted using a silicon material. The laser bending simulation program was written by APDL to simulate the single point pulse action process to obtain the temperature variation on action point in cycle time.An NiCr/NiSi alloy thin film thermocouple was applied to measure temperature distribution of single-pulse action process. By comparing the temperature field simulation results with thermocouple measurement results, the absorption factor of silicon was modified to 0.82. Finite element analysis was used in the simulation of pulse laser bending of silicon, results show that the error between the result of bending simulation and that of experiment is only 0.1°, which indicates that the simulation program is effective and provides theoretical and experimental foundations for laser bending of silicon.

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