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Anisotropic Damage Mechanism during Grinding of CdZnTe Wafers

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Indexed by:期刊论文

Date of Publication:2010-06-01

Journal:MATERIALS AND MANUFACTURING PROCESSES

Included Journals:SCIE、EI

Volume:25

Issue:6

Page Number:407-411

ISSN No.:1042-6914

Key Words:CdZnTe; Cleavage plane; Damage; Grinding wheel; Plastic deformation; Subsurface; Surface; Stacking faults

Abstract:The grinding wheels with grit size of #600 and #2000 are employed to grind CdZnTe (110) and (111) planes, and ground surface and subsurface damages were investigated. The experimental results show the damage types are affected by the crystallographic orientation and grit size. When grinding CdZnTe wafers with grit size of #600, due to different angle between the cleavage plane and ground surface, the surface morphology and directions of cracks on the (111) plane are different from those on the (110) plane. When grinding CdZnTe wafers with grit size of #2000, the (111) plane has less plastic deformation than the (110) plane, and there is obvious direction of stacking faults on subsurface.

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