Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2011-03-15

Journal: APPLIED SURFACE SCIENCE

Included Journals: EI、SCIE

Volume: 257

Issue: 11

Page Number: 5121-5124

ISSN: 0169-4332

Key Words: Sb-doped ZnO; Pulsed laser deposition; Hall-effect-measurement; X-ray diffraction; Scan electronic microscopy; Photoluminescence spectra

Abstract: Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 degrees C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 degrees C showed strong acceptor-bound exciton (A(0)X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum. (C) 2011 Elsevier B.V. All rights reserved.