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Indexed by:期刊论文

Date of Publication:2009-02-01

Journal:APPLIED SURFACE SCIENCE

Included Journals:SCIE、EI、Scopus

Volume:255

Issue:8

Page Number:4430-4433

ISSN No.:0169-4332

Key Words:ZnO; Nanoneedle arrays; Photoluminescence; Phosphorus-doped

Abstract:Phosphorus-doped ZnO nanoneedle arrays were prepared by phosphorus diffusion from InP substrate using a pulsed laser deposition (PLD) technique. The optical properties of ZnO nanoneedle were investigated by photoluminescence (PL) spectroscopy. Low-temperature photoluminescence spectrum measurements exhibited five acceptor-related emission peaks. The excitation intensity and temperature dependent photoluminescence spectra confirmed that the emission peaks corresponded to neutral-acceptor bound exciton, free electron to acceptor, donor-acceptor pairs, and their first and second photon replicas transitions. Acceptor-binding energy was determined to be 135-167 meV, which agrees well with the best-fitting result of the temperature dependent photoluminescence measurements and is reasonable in terms of theoretic prediction in ZnO. (C) 2008 Elsevier B. V. All rights reserved.