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ZnO微米刺球的CVD法生长及其在压电应力传感器中的应用

Release Time:2019-03-10  Hits:

Indexed by: Journal Article

Date of Publication: 2013-09-15

Journal: 人工晶体学报

Included Journals: Scopus、CSCD、ISTIC、PKU、EI

Volume: 42

Issue: 9

Page Number: 1746-1749

ISSN: 1000-985X

Key Words: 氧化锌;微米刺球;化学气相沉积;压电应力传感器;开关比

Abstract: 利用化学气相沉积(CVD)方法生长出一种新颖的氧化锌(ZnO)微米刺球状结构,并使用该结构制备出一种新型压电应力传感器件.使用半导体特性分析系统(Keithley 4200)对器件特性进行测试,结果表明该种器件对所施加的应力高度敏感,开关比高达约60,比目前多数ZnO基压电应力传感器件高出数倍,在应力检测和机电开关等领域有很好的应用前景.

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