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论文类型：会议论文

发表时间：2007-01-01

关键字：Zinc oxide;nanopipe;InAs;XRD;FESEM

摘要：In-doped ZnO nanopipes were grown on the InAs(100) substrate by pulsed laser deposition at relatively high temperature. Through FESEM, XRD analysis and photoluminescence study, the morphology of the ZnO nanopipes was shown, the material and crystalline quality were confirmed and the PL spectrum was given. The test results showed that the ZnO nanopipes array whose average diameter was about 400nm was fine and close and had a preferred grown orientation perpendicular to the substrate. The results of XRD revealed that the nanostructure grown had perfect crystalline quality and the Indium element of substrate diffused forming IZO compound.