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论文类型：会议论文

发表时间：2015-05-16

收录刊物：EI、CPCI-S、Scopus

卷号：87

期号：1

摘要：Thin films of poly (methyl methacrylate) (PMMA) were prepared on n-Si substrate and indium tin oxide (ITO) glass was prepared by spin coating. High frequency capacitance-voltage (C-V) and current-voltage (I-V) characterization were carried out on the Al/PMMA/nSi and Al/PMMA/ITO glass structures, with the films as the insulator layer to evaluate the electrical properties. For the PMMA, the dielectric constant value obtained was about 3.9 at 1 MHz. The breakdown field strength of PMMA can be influenced by the impurities and surface charges or the interface states in the Si substrate. The average transmittance value of the PMMA/ITO glass layer was above 80% in the visible range.