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论文类型：期刊论文

发表时间：2017-08-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：Scopus、SCIE

卷号：34

期号：9

ISSN号：0256-307X

摘要：For the frequency range of 1 kHz-10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage (C-V) and conductance-frequency-voltage (G-f-V) measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance (R-s) on high-frequency (5 MHz) capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the C-HF-C-LF capacitance and the conductance method are 2 x 10(12) eV(-1)cm(-2) and 0.94 x 10(12) eV(-1)cm(-2), respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.