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论文类型：期刊论文

发表时间：2011-09-01

发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物：Scopus、SCIE、EI

卷号：14

期号：3-4

页面范围：274-277

ISSN号：1369-8001

关键字：ZnO:Ag films; Raman spectroscopy; Annealed; PLD

摘要：We prepared Ag doped zinc oxide (ZnO:Ag) films using pulsed laser deposition method and studied the Raman spectra of the unannealed and annealed films. The results indicate that the ZnO:Ag films could still retain their wurtzite structure: the A(1) (LO) mode resulting from oxygen vacancies and zinc interstitials was observed to be very strong in the Raman spectra. A local vibrational mode at 493 cm(-1) induced by Ag doping could also be clearly observed in the Raman spectra, which may be used as an indication of Ag incorporation into the ZnO lattice. (C) 2011 Elsevier Ltd. All rights reserved.