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论文类型：期刊论文

发表时间：2010-06-01

发表刊物：MATERIALS AT HIGH TEMPERATURES

收录刊物：SCIE、EI、Scopus

卷号：27

期号：2

页面范围：97-99

ISSN号：0960-3409

关键字：ZnO films; AlN layers; coatings

摘要：The ZnO films coated with AlN layers were annealed at different temperature. For comparison, a ZnO film without an AlN layer was also annealed. It has been observed, from room temperature photoluminescence, that the ZnO films coated with AlN layers do not show a deep level peak, reported to be associated with oxygen vacancies an similar oxygen defects. Low temperature photoluminescence shows that the intensity of the peak at 3.336 eV increases as a function of the annealing temperature, while the AlN layer somewhat decreases the intensity of this peak. It is evident that this peak at about 3.336 eV may be associated with increased dislocation formation in the ZnO thin film.