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论文类型：期刊论文

发表时间：2009-05-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：SCIE、ISTIC

卷号：26

期号：5

ISSN号：0256-307X

摘要：Phosphorus-doped ZnO (ZnO:P) thin films are deposited on a c-plane sapphire in oxygen at 350 degrees C, 450 degrees C, 550 degrees C and 650 degrees C, respectively, by pulsed laser deposition (PLD), then all the ZnO:P samples are annealed at 650 degrees C in oxygen with a pressure of 1 x 10(5) Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO:P thin films is improved with the increasing substrate temperature from 350 degrees C to 550 degrees C. With a further increase of the deposition temperature, the crystalline quality of the ZnO:P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350 degrees C and 450 degrees C show a strong acceptor-bound exciton (A(0)X) emission. The electrical properties of ZnO:P films strongly depend on the deposition temperature. The ZnO:P samples deposited at 350 degrees C and 450 degrees C exhibit p-type conductivity. The p-type ZnO:P film deposited at 450 degrees C shows a resistivity of 1.846 Omega.cm and a relatively high hole concentration of 5.100 x 10(17) cm(-3) at room temperature.