个人信息Personal Information
副教授
硕士生导师
性别:女
毕业院校:北京大学
学位:博士
所在单位:集成电路学院
学科:微电子学与固体电子学
办公地点:大连理工大学开发区校区信息楼211-1
电子邮箱:hqzhang@dlut.edu.cn
Porous MgO film grown on sapphire by pulsed-laser deposition
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论文类型:期刊论文
发表时间:2009-03-01
发表刊物:MICRO & NANO LETTERS
收录刊物:SCIE、EI、Scopus
卷号:4
期号:1
页面范围:59-62
ISSN号:1750-0443
摘要:A porous MgO film was grown on sapphire by pulsed-laser deposition. First, small islands of ZnO are grown, and then MgO at a high temperature and high vacuum is deposited. The shortest distance between the two pores is about 5 um. The ZnO grains are grown at the bottom of the pore. The ZnO grains at the rim of the bottom are thinner than that of the centre at the bottom, at which the grains look like thin nano-rods. It is evident that MgO would not be deposited on ZnO small islands at a high vacuum and high temperature when the substrate is sapphire. This morphology can be used for fabricating the materials in which the shortest distance between the two nanoparticles is about 5 um. It seems that other porous materials can also be realised by this method.