教授 博士生导师 硕士生导师
性别: 男
毕业院校: 大连理工大学
学位: 博士
所在单位: 材料科学与工程学院
学科: 材料学. 功能材料化学与化工. 化学工程
办公地点: 材料楼330办公室
联系方式: 0411-84706595
电子邮箱: huang@dlut.edu.cn
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论文类型: 会议论文
发表时间: 2011-08-08
收录刊物: EI、CPCI-S、Scopus
页面范围: 316-320
摘要: The Cu/Sn3.0Ag0.5Cu/Ni (Cu/SAC305/Ni) solder joints were designed to investigate the Cu, Ni atoms diffusion behavior and the interfacial reaction during electromigration (EM) at 180 degrees C under a current density of 1.0x10(4) A/cm(2). For comparison, the Cu/Sn3.0Ag0.5Cu/Ni solder joints were aged at 180 degrees C for the same durations. In as-soldered state, the (Cu0.55Ni0.45)(6)Sn-5 and (Cu0.92Ni0.08)(6)Sn-5 IMCs formed at the SAC305/Ni and SAC305/Cu interfaces, respectively. The interfacial IMC thickness increased with increasing aging time. During EM, the current direction played an important role on Cu consumption. When electrons flowed from PCB side to chip side, the Cu pad dissolved into the solder and microcrack formed at the solder/Cu interface. The dissolved Cu atoms were driven toward the anode side and precipitated as large Cu6Sn5 IMCs in the solder matrix along the flowing direction of electrons. While when electrons flowed from chip side to PCB side, no Cu pad consumption was observed and a thick layer-type Cu6Sn5 IMC formed at the SAC305/Cu interface; the thickness of the interfacial IMCs increased with increasing EM time and increased to 15.90 mu m after EM for 100 h. As to Ni UBM, no significant consumption of Ni was observed even electrons flowed from chip side to PCB side. Ni UBM was more resistant than Cu UBM during EM. After EM for 143 h, the solder joint failed due to the melting of the SAC305 solder bump.