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论文类型： 会议论文

发表时间： 2017-08-16

发表刊物： 18th International Conference on Electronic Packaging Technology, ICEPT 2017

收录刊物： EI、Scopus

页面范围： 1296-1299

摘要： The effect of anisotropy in   -Sn grain on electromigration (EM)-induced failure mechanism of the Ni/Sn-3.0Ag-0.5Cu/Ni-P solder interconnects was in situ investigated. Sn grain orientation was a crucial factor in dominating the EM behavior. When the c-axis of Sn grain was parallel to the electron flow direction, a larger EM flux was induced, resulting in an excessive dissolution of Ni at the cathode. Sn hillocks were squeezed out at intermetallic compounds (IMCs)/solder interface on the anode side to relieve surficial compressive stress in the current crowding regions. When the c-axis of   -Sn grain was perpendicular to the electron flow direction, EM-induced void formation and propagation at the cathode resulted from the lower Ni diffusion flux. Furthermore, (Ni,Cu)3Sn4-type IMCs precipitated along the c-axis in single   -Sn grain in the bumps. ? 2017 IEEE.