教授 博士生导师 硕士生导师
性别: 男
毕业院校: 大连理工大学
学位: 博士
所在单位: 材料科学与工程学院
学科: 材料学. 功能材料化学与化工. 化学工程
办公地点: 材料楼330办公室
联系方式: 0411-84706595
电子邮箱: huang@dlut.edu.cn
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论文类型: 会议论文
发表时间: 2010-01-01
收录刊物: EI、Scopus
页面范围: 1132-1137
摘要: The electromigration (EM) behavior of 300 m Sn-3.0Ag- 0.5Cu solder bumps on Au/Ni-P substrate metallization in flip chip package was investigated at 150 C with a current density of 5 10 3 A/cm 2. After reflowing for three times, the massive spalling of original intermetallic compound (IMC) of (Cu,Ni)6Sn5 was observed on the chip side. After aging and EM at 150 C for 200 h, the initial intermetallic (Cu,Ni)6Sn5 at both interfaces transformed into (Ni,Cu)3Sn4. After aging at 150 C for 200 h, the binary compound AuSn4 in solder turned into ternary compound (Au,Ni)Sn4 and formed at the both interfaces. However, after EM at 150 C for 200 h, the (Au,Ni)Sn4 was observed only at the anode interface but not at the cathode interface. When the electron flowed from the rinted circuit board (PCB) substrate side to the chip side, a selective depletion of the Ni-P layer occurred on the PCB substrate side (cathode) after EM for 200 h, leaving the Ni3P hase with a large number of columnar voids. After EM for 400 h, the damage of Ni-P layer spread over the entire cathode interface. When the electron flowed from the chip side to the PCB substrate side, the voids formed at the interface between solder and IMC layer, and the dissolution of Ni UBM and Cu ad occurred at the higher current density regions after EM for 400 h. Thermal electrical finite element simulation for the flip chip test vehicle showed that the current crowding occurred at the contacts between the solder bump and the Cu trace, and serious Joule heating was generated in the solder bump. It is shown that the simulative results agreed with the experimental results. ? 2010 IEEE.