教授 博士生导师 硕士生导师
性别: 男
毕业院校: 大连理工大学
学位: 博士
所在单位: 材料科学与工程学院
学科: 材料学. 功能材料化学与化工. 化学工程
办公地点: 材料楼330办公室
联系方式: 0411-84706595
电子邮箱: huang@dlut.edu.cn
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论文类型: 会议论文
发表时间: 2014-01-01
收录刊物: EI、Scopus
卷号: 60
期号: 1
页面范围: 811-816
摘要: Line-type Cu/Sn/Ni and Cu/Sn/Ni-P interconnects as well as real Ni/Sn3.0Ag0.5Cu/Cu and Ni/Sn3.0Ag0.5Cu/Ni-P flip chip solder joints were comparatively studied to reveal the electromigration reliability of solder joints. The experimental results of the line-type solder interconnects showed that Cu could diffuse to the opposite anode Ni interface and change the interfacial IMC type while Ni could not change IMC type at the opposite anode Cu interface under a current density of 1 104A/cm2 at 150 C. In real flip chip solder joints, the EM life of Cu (OSP) solder joints was significantly longer than that of Ni-P (ENEPIG) solder joints. A higher Cu content in the solder bumps effectively improved the electromigration resistance of solder joints. This work provides a suggestion for optimizing the structure of flip chip solder joints. ? 2014 The Electrochemical Society.