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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-04-01

发表刊物：JOURNAL OF ELECTRONIC MATERIALS

收录刊物：EI、SCIE

卷号：41

期号：4

页面范围：730-740

ISSN号：0361-5235

关键字：Electromigration; interfacial reaction; cross-solder interaction; downwind diffusion; upwind diffusion; Cu/Sn/electroless Ni-P

摘要：The effect of electromigration (EM) on the interfacial reaction in a line-type Cu/Sn/Ni-P/Al/Ni-P/Sn/Cu interconnect was investigated at 150A degrees C under 5.0 x 10(3) A/cm(2). When Cu atoms were under downwind diffusion, EM enhanced the cross-solder diffusion of Cu atoms to the opposite Ni-P/Sn (anode) interface compared with the aging case, resulting in the transformation of interfacial intermetallic compound (IMC) from Ni3Sn4 into (Cu,Ni)(6)Sn-5. However, at the Sn/Cu (cathode) interface, the interfacial IMCs remained as Cu6Sn5 (containing less than 0.2 wt.% Ni) and Cu3Sn. When Ni atoms were under downwind diffusion, only a very small quantity of Ni atoms diffused to the opposite Cu/Sn (anode) interface and the interfacial IMCs remained as Cu6Sn5 (containing less than 0.6 wt.% Ni) and Cu3Sn. EM significantly accelerated the dissolution of Ni atoms from the Ni-P and the interfacial Ni3Sn4 compared with the aging case, resulting in fast growth of Ni3P and Ni2SnP, disappearance of interfacial Ni3Sn4, and congregation of large (Ni,Cu)(3)Sn-4 particles in the Sn solder matrix. The growth kinetics of Ni3P and Ni2SnP were significantly accelerated after the interfacial Ni3Sn4 IMC completely dissolved into the solder, but still followed the t (1/2) law.