周平

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:机械工程学院

学科:机械制造及其自动化

办公地点:大连理工大学机械工程学院知方楼5009

联系方式:pzhou@dlut.edu.cn

电子邮箱:pzhou@dlut.edu.cn

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A load identification method for the grinding damage induced stress (GDIS) distribution in silicon wafers

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论文类型:期刊论文

发表时间:2016-08-01

发表刊物:INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE

收录刊物:SCIE、EI、Scopus

卷号:107

页面范围:1-7

ISSN号:0890-6955

关键字:Grinding; Subsurface damage; Silicon; Residual stress; Load identification

摘要:Subsurface damage (SSD) and grinding damage induced stress (GDIS) result in deformation and strength degradation of a ground silicon wafer. The Stoney equation is widely used as a non-destructive method for finding GDIS in a silicon wafer prepared by the rotational grinding method. However, the basic assumptions of the Stoney equation ignore the detailed information on the GDIS in a ground wafer. In this paper, a new method is proposed for analyzing GDIS distribution in a silicon wafer thinned by grinding. The wafer is diced into small chips for identification of stress state with a load identification method. The results show that the stresses are not independent of the direction as assumed in the Stoney equation, and the ratio of the two principal stresses in the damage layer is approximately 2:3 under the grinding conditions of a #3000 diamond wheel with a spark-out time of 5 s. Moreover, the principal stress direction is obviously aligned with the grinding direction but independent of the crystalline orientation. The SSD is observed with a Transmission Electron Microscope (TEM), which shows numerous plane defects parallel to the {111} planes. It can be deduced from the results that the defects are non-uniformly distributed in the subsurface with their directions in the slip direction of the grinding abrasives. However, the principal stresses at any points have their respective values close to each other. The results of this study are unique and unexpected. (C) 2016 Elsevier Ltd. All rights reserved.