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发表时间：2007-01-01

发表刊物：中国激光

所属单位：机械工程学院

期号：11

页面范围：1589-1593

ISSN号：0258-7025

摘要：Surface properties such as profile and crystal phase of bent silicon samples by long laser pulses were analyzed. The results indicated that the irradiated surface was divided into ambient region, transition region and main function region. The surfaces of the transition region and main function region were changed seriously, and massing stacking fault and ripple profile were found respectively. The typical transformation of amorphous silicon was not found at Raman spectrum of the main function region, and only existed tiny Si-I&rarrSi-III conversion. Meanwhile the crystal-plane orientation was changed seriously compared to the initial crystal-plane by X-ray crystal-plane identification, and crystal distortion and thinning appeared in the region irradiated.

备注：新增回溯数据