点击次数：

发表时间：2009-01-01

发表刊物：大连理工大学学报

所属单位：机械工程学院

期号：4

页面范围：531-535

ISSN号：1000-8608

摘要：According to the experiment of laser bending silicon with long pulse width,the temperature distribution characteristics of silicon during process of laser bending is analyzed by Ansys software.The calculated results indicate that the steep temperature fluctuation in one point exists during process of scanning,meanwhile in the later half-period of first scanning,brittle-ductile temperature transforming point appears,so the first scanning is considered as the pre-heated silicon,that is in line with the phenomena of experiment.In the later process of scanning,TGM (temperature gradient mechanism) and BM (buckling mechanism) are proved to be in existence according to the different temperatures between top and bottom surfaces,and the proportional relationship of spot diameter and thickness as well as the temperature increment is less as the increase of scanning times through the analysis for initial and maximum temperature,and finally the temperature distribution is hardly changing.

备注：新增回溯数据