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论文类型：期刊论文

发表时间：2022-06-26

发表刊物：光学精密工程

所属单位：机械工程学院

期号：9

页面范围：1361-1365

ISSN号：1004-924X

摘要：The experiment of silicon chip bending by a millisecond pulse width Nd:YAG laser was done, and the energy threshold of silicon bending was given. Meanwhile, using the Nd:YAG long pulse laser, the influence of pulse frequency and pulse width on the bending angle was mainly investigated, which could be transformed to the influence of scanning velocity and power intensity on the bending angle. The pulse duty cycle was also used to describe the influence of the energy time distribution on bending. The experimental results indicate that the silicon chip could be bent an angle more than 20° using the Nd:YAG long pulse laser.

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