Hits:

Indexed by:期刊论文

Date of Publication:2019-01-01

Journal:RSC ADVANCES

Included Journals:SCIE、EI

Volume:9

Issue:12

Page Number:6681-6688

ISSN No.:2046-2069

Key Words:Aluminum; Annealing; Buffer layers; Electric resistance; Open circuit voltage; Silica; Silicon oxides; Solar cells, Cell efficiency; Fabrication process; Industrial processs; Interface conditions; Metal contacts; Metal-silicon interfaces; Recombination velocity; Series resistances, Silicon solar cells

Abstract:This paper aims to develop high quality screen-printed Al emitters and improve the interface condition of rear contacts in industrial silicon solar cells. We propose to introduce an ultra-thin SiO2 buffer layer between the silicon bulk and metal contact during the fabrication process. A post-annealing strategy is adapted to further modify the Al doping profiles. The experimental results show that the effects of this oxide layer on migrating the nonuniformity of Al-p(+) region and decreasing the defects at the metal-silicon interface are significant. The recombination velocity of contacts, which is extracted from the measured S-rear by an analytical model, exhibits a decrease by 90.8% and the series resistance is reduced by 60.3% for the improved contacts compared to the conventional screen-printed contacts. Finally, this technique is applied to large-area (156 x 156 mm(2)) industrial n-type silicon solar cells and leads to a 2.18% increase in average cell efficiency, including a 12.82 mV increase in open-circuit voltage V-oc and 0.99 mA cm(-2) increase in short-circuit current density J(sc) compared with solar cells fabricated by a standard industrial process. A 19.16% efficient cell with a V-oc of 637.47 mV is achieved.