NAME

刘爱民

Paper Publications

Influence of the asymmetrical defect state distribution at the a-Si:H/cSi interface on the performance of homo-heterojunction solar cells
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  • Indexed by:

    期刊论文

  • First Author:

    Lin Yiren

  • Correspondence Author:

    Liu, AM (reprint author), Dalian Univ Technol, Sch Phys, Dalian, Peoples R China.

  • Co-author:

    Tan Xin,Liu Aimin

  • Date of Publication:

    2019-04-01

  • Journal:

    SURFACE SCIENCE

  • Included Journals:

    SCIE、EI

  • Document Type:

    J

  • Volume:

    682

  • Page Number:

    51-59

  • ISSN No.:

    0039-6028

  • Key Words:

    Asymmetry; Defect states at hetero-interface; Homo-heterojunction; Solar cells

  • Abstract:

    An emerging cell concept called HH (homo-heterojunction) solar cells possesses a potential to realize high photoelectric conversion efficiency, which has been investigated by the aid of numerical simulation tool AFORS-HET recently. Taking into account the fact that the distribution of defect states (acceptor N-itA and donor N-itD) defect states) at the hetero-interface does not have strictly symmetrical shape, we present a simulation study of a ZnO/(p)a-Si:H/(p)cSi/(n)cSi/(i)a-Si:H/(n)a-Si:H/Ag solar cell with particular emphasis on the role of the asymmetrical defect state distribution (N-itA/N-itD = 1) at the front (p)a-Si:H/(p)cSi interface. The presented results suggest that the HH structure has a better tolerance of the broken symmetry of defect state distribution at the hetero-interface, which benefits from inherent favourable band alignment of HH structure. An in-depth understanding of transport properties can help to improve the efficiency of a silicon-based solar cell, and provide useful guidance for design strategies of photovoltaic devices.

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