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论文类型： 期刊论文

发表时间： 2019-01-01

发表刊物： RSC ADVANCES

收录刊物： SCIE、EI

卷号： 9

期号： 12

页面范围： 6681-6688

ISSN号： 2046-2069

关键字： Aluminum; Annealing; Buffer layers; Electric resistance; Open circuit voltage; Silica; Silicon oxides; Solar cells, Cell efficiency; Fabrication process; Industrial processs; Interface conditions; Metal contacts; Metal-silicon interfaces; Recombination velocity; Series resistances, Silicon solar cells

摘要： This paper aims to develop high quality screen-printed Al emitters and improve the interface condition of rear contacts in industrial silicon solar cells. We propose to introduce an ultra-thin SiO2 buffer layer between the silicon bulk and metal contact during the fabrication process. A post-annealing strategy is adapted to further modify the Al doping profiles. The experimental results show that the effects of this oxide layer on migrating the nonuniformity of Al-p(+) region and decreasing the defects at the metal-silicon interface are significant. The recombination velocity of contacts, which is extracted from the measured S-rear by an analytical model, exhibits a decrease by 90.8% and the series resistance is reduced by 60.3% for the improved contacts compared to the conventional screen-printed contacts. Finally, this technique is applied to large-area (156 x 156 mm(2)) industrial n-type silicon solar cells and leads to a 2.18% increase in average cell efficiency, including a 12.82 mV increase in open-circuit voltage V-oc and 0.99 mA cm(-2) increase in short-circuit current density J(sc) compared with solar cells fabricated by a standard industrial process. A 19.16% efficient cell with a V-oc of 637.47 mV is achieved.