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论文类型： 期刊论文

发表时间： 2019-04-01

发表刊物： SURFACE SCIENCE

收录刊物： SCIE、EI

卷号： 682

页面范围： 51-59

ISSN号： 0039-6028

关键字： Asymmetry; Defect states at hetero-interface; Homo-heterojunction; Solar cells

摘要： An emerging cell concept called HH (homo-heterojunction) solar cells possesses a potential to realize high photoelectric conversion efficiency, which has been investigated by the aid of numerical simulation tool AFORS-HET recently. Taking into account the fact that the distribution of defect states (acceptor N-itA and donor N-itD) defect states) at the hetero-interface does not have strictly symmetrical shape, we present a simulation study of a ZnO/(p)a-Si:H/(p)cSi/(n)cSi/(i)a-Si:H/(n)a-Si:H/Ag solar cell with particular emphasis on the role of the asymmetrical defect state distribution (N-itA/N-itD = 1) at the front (p)a-Si:H/(p)cSi interface. The presented results suggest that the HH structure has a better tolerance of the broken symmetry of defect state distribution at the hetero-interface, which benefits from inherent favourable band alignment of HH structure. An in-depth understanding of transport properties can help to improve the efficiency of a silicon-based solar cell, and provide useful guidance for design strategies of photovoltaic devices.