教授 博士生导师 硕士生导师
性别: 男
毕业院校: 中科院半导体所
学位: 博士
所在单位: 物理学院
电子邮箱: aiminl@dlut.edu.cn
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论文类型: 期刊论文
发表时间: 2011-10-31
发表刊物: APPLIED PHYSICS LETTERS
收录刊物: Scopus、SCIE、EI
卷号: 99
期号: 18
ISSN号: 0003-6951
摘要: Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to V(Zn), such as V(Zn) and Li(i)-NO-V(Zn) complex, well supported by first-principles calculations. The incorporation of NO can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Li(i) to form Li(i)-NO complex, which restrains the compensation of Li(i) for V(Zn) and makes the ZnO:(Li, N) conduct in p-type. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657412]