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论文类型： 期刊论文

发表时间： 2011-06-15

发表刊物： APPLIED SURFACE SCIENCE

收录刊物： Scopus、SCIE、EI

卷号： 257

期号： 17

页面范围： 7411-7414

ISSN号： 0169-4332

关键字： Pyramids; Nanowires; Reflectance; Etching

摘要： A pyramid and nanowire binary structure of monocrystalline silicon wafer was fabricated by chemical etching. Much lower reflectance of silicon wafer with this structure was obtained compared with that of single pyramid or nanowaire arrays. The morphology, reflectivity and etching thickness of this structure were studied, as well as the influence on them caused by etching time and thickness of silver film. An average reflectance of 0.9% was obtained under optimized condition. The formation mechanism of silicon nanowires was explained by experimental evidence. (C) 2011 Elsevier B. V. All rights reserved.