Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2010-06-26

Included Journals: Scopus、CPCI-S、EI

Volume: 675-677

Page Number: 1275-1278

Key Words: Transparent conducting oxide (TCO); Al-doped ZnO (ZnO:Al); Sputtering; solar cell

Abstract: ZnO:Al thin films were deposited on glass substrates by r. f. magnetron sputtering. The crystal structures were characterized using X-ray diffraction. The electrical property and the light transmission of the ZnO:Al thin films were investigates utilizing Hall system and UVNis/NIR spectrophotometer. The results show that the ZnO:Al thin films prepared with the sputtering power of 100W, working pressure of 0.3Pa and substrate temperature of 250 degrees C have the resistivity as low as 3.1 x 10(-3) Omega.cm and transmittance over 90% in visible region. From the GIXRD patterns, higher electrical conductivity is related to the higher ratio of I-(10)(2)/I-(002), which is a new reasonable structure parameter to estimate the electrical property of ZnO:Al thin films.