Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2010-06-26

Included Journals: Scopus、SCIE、CPCI-S、EI

Volume: 675-677

Page Number: 1287-1290

Key Words: P-type doping; mu c-Si:H film; ECR-PECVD; Hall

Abstract: P-type microcrystalline silicon films prepared by electron cyclotron resonance (ECR) PECVD are studied here. Silane diluted with Ar (SiH4/Ar=1/19) is used as a source gas and diborane (B2H6) diluted with H-2 (100ppm) as doping gases. The effect of flow rate of doping gas on the microstructures and electrical properties of the films were investigated. Raman spectroscopy and X-ray diffraction were used to determine the film structure; AFM was employed to characterize the film surface topography; Hall measurements were carried out on the doped films to determine the carrier type, carrier concentration, and Hall mobility. The optical quality was measure by transmission spectrum.