大连理工大学主页平台管理系统 John Wu Influence of Ar/H-2 ratio on the characteristics of boron-doped nc-Si:H films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition Aimin Wu

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Influence of Ar/H-2 ratio on the characteristics of boron-doped nc-Si:H films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Release Time:2023-04-10 Hits:

Date of Publication: 2022-10-03

Journal: SURFACE COATINGS TECHNOLOGY

Volume: 228

Issue: SUPPL.1

Page Number: S412-S415

ISSN: 0257-8972

Next One:Influence of Ar/H-2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

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Influence of Ar/H-2 ratio on the characteristics of boron-doped nc-Si:H films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition