Release Time:2019-03-10  Hits:

Indexed by: Journal Article

Date of Publication: 2009-08-15

Journal: 半导体光电

Included Journals: CSCD、ISTIC、PKU、Scopus

Volume: 30

Issue: 4

Page Number: 558-561

ISSN: 1001-5868

Key Words: ECR-PECVD;氮化硅薄膜;沉积速率;表面形貌

Abstract: /min.薄膜的粗糙度随着衬底温度和微波功率的增加而降低,粗糙度最低为0.89 nm,说明薄膜的表面质量较高.