location: Current position: Aimin Wu >> Scientific Research >> Paper Publications

氮化硅薄膜的沉积速率和表面形貌

Hits:

Indexed by:期刊论文

Date of Publication:2009-08-15

Journal:半导体光电

Included Journals:Scopus、PKU、ISTIC、CSCD

Volume:30

Issue:4

Page Number:558-561

ISSN No.:1001-5868

Key Words:ECR-PECVD;氮化硅薄膜;沉积速率;表面形貌

Abstract:/min.薄膜的粗糙度随着衬底温度和微波功率的增加而降低,粗糙度最低为0.89 nm,说明薄膜的表面质量较高.

Pre One:The synthesis, structure and cathodoluminescence of ellipsoid-shaped ZnGa2O4 nanorods

Next One:ECR-PECVD制备n型微晶硅薄膜的研究