副教授 博士生导师 硕士生导师
任职 : 辽宁省能源材料及器件重点实验室副主任
性别: 男
毕业院校: 大连理工大学
学位: 博士
所在单位: 材料科学与工程学院
学科: 材料物理与化学. 材料表面工程
办公地点: 新三束4#楼311室
联系方式: 0411-84706661-101
电子邮箱: aimin@dlut.edu.cn
开通时间: 2016.11.27
最后更新时间: 2016.11.27
点击次数:
论文类型: 会议论文
发表时间: 2010-08-02
收录刊物: EI、CPCI-S、Scopus
卷号: 654-656
页面范围: 1716-+
关键字: GaN; nitridation; glass substrate; PEMOCVD
摘要: Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.