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吴爱民
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副教授   博士生导师   硕士生导师

任职 : 辽宁省能源材料及器件重点实验室副主任

性别: 男

毕业院校: 大连理工大学

学位: 博士

所在单位: 材料科学与工程学院

学科: 材料物理与化学. 材料表面工程

办公地点: 新三束4#楼311室

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开通时间: 2016.11.27

最后更新时间: 2016.11.27

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Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method

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论文类型: 会议论文

发表时间: 2010-08-02

收录刊物: EI、CPCI-S、Scopus

卷号: 654-656

页面范围: 1716-+

关键字: GaN; nitridation; glass substrate; PEMOCVD

摘要: Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.

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