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发表时间： 2022-10-06

发表刊物： 哈尔滨工程大学学报

期号： 11

页面范围： 1331-1334

ISSN号： 1006-7043

摘要： In order to improve manufacturing efficiency for thin film solar cells on glass substrates, silicon nitride film was deposited by electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-PECVD) at low temperature on a glass substrate. Pure nitrogen was used as the plasma gas, and silane (Ar diluted, 5% SiH_4) as the precursor gas. Results show that uniform silicon nitride film with low hydrogen content can be deposited at a high deposition rate (10.7 nm/min). The refractive index increased with rising substrate temperature and increased microwave power. The film has good optical properties (refractive index around 2.0) and surface quality (average roughness 1.45 nm) when the deposition parameters are T=350℃ and p=650 W. This allows a uniform, even, and high quality SiN film to be prepared at higher deposition speeds.

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