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发表时间： 2022-10-06

发表刊物： 材料研究学报

卷号： 24

期号： 5

页面范围： 547-549

ISSN号： 1005-3093

摘要： Microcrystalline silicon films were prepared using Ar diluted SiH4
   gaseous mixture by electron cyclotron resonance plasma-enhanced chemical
   vapor deposition(ECR-PECVD).The effects of the microwave power on
   deposition rate,crystallinity,grain size and the configuration of H
   existing in microcrystalline silicon films were investigated.The results
   show that the crystallinity increases and the concentration of hydrogen
   decreases monotonously with the increasing of the microwave power.But
   the deposition rate first increases monotonously,and then
   decreases.Optimized microwave power is 600 W for the highest deposition
   rate.<111〉orientation is the only dominant crystal texture for films
   obtained with different power

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