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论文类型： 期刊论文

发表时间： 2009-01-01

发表刊物： Science in China Series E-Technological Sciences

收录刊物： SCIE、EI

卷号： 52

期号： 1

页面范围： 260-263

ISSN号： 1006-9321

关键字： ECR-PECVD; poly silicon; low temperature; glass substrate

摘要： In order to reduce the cost of solar cells or flat-panel display, it is very important to synthesis poly-crystalline silicon films on low cost substrate such as glass at low temperature. In this work, electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system was successfully applied to synthesize poly-Si thin-film on common glass substrate using H(2) as the plasma source and SiH(4) (Ar:SiH(4) = 19:1) as the precursor gas at low temperature. Since the multicusp cavity-coupling ECR plasma source was adopted to provide active precursors, the growth temperature decreased to lower than 200 degrees C. In the plasma, the electron temperatures kT(e) are similar to 2-3 eV and the ion temperatures kT(i) <= 1 eV. This leads to non-remarkable ion impacts during the film deposition. The characteristic of poly-Si films was investigated. It was shown that the crystalline fraction X(c) of the films can be up to 90% even deposit at room temperature, and the film was (220) preferably oriented. The growth behaviors of the film between the interface of glass and Si films were also discussed in detail.