大连理工大学  登录  English 
吴爱民
点赞:

副教授   博士生导师   硕士生导师

任职 : 辽宁省能源材料及器件重点实验室副主任

性别: 男

毕业院校: 大连理工大学

学位: 博士

所在单位: 材料科学与工程学院

学科: 材料物理与化学. 材料表面工程

办公地点: 新三束4#楼311室

联系方式: 0411-84706661-101

电子邮箱: aimin@dlut.edu.cn

手机版

访问量:

开通时间: ..

最后更新时间: ..

当前位置: 吴爱民 >> 科学研究 >> 论文成果
Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4

点击次数:

论文类型: 期刊论文

发表时间: 2008-09-01

发表刊物: JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

收录刊物: SCIE、EI、ISTIC、Scopus

卷号: 24

期号: 5

页面范围: 690-692

ISSN号: 1005-0302

关键字: Ar flow rate; ECR-PECVD; Poly-Si; Thin Films

摘要: In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using SiH4/Ar and SiH4/H-2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H-2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H-2, while the preferred orientations and the grain sizes of the films were analogous. Film crystallinity increased with the increase of Ar flow rate. Optimized flow ratio of SiH4 to Ar was obtained as F(SiH4): F(Ar)=10:70 for the highest deposition rate.

辽ICP备05001357号 地址:中国·辽宁省大连市甘井子区凌工路2号 邮编:116024
版权所有:大连理工大学