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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2013-01-01

发表刊物：ECS SOLID STATE LETTERS

收录刊物：Scopus、EI、SCIE

卷号：2

期号：4

页面范围：Q17-Q20

ISSN号：2162-8742

摘要：A simple low temperature surface passivation method based on high pressure O-2 thermal oxidation was proposed for black silicon solar cells. With this method, the nanowire textured surface of the black silicon solar cells can be effectively passivated at an extremely low temperature of similar to 450 degrees C, and a better performance was achieved compared with that treated with the conventional high temperature surface passivation. The corresponding mechanism was discussed based on current-voltage characteristics and external quantum efficiency measurements. Results demonstrate that the adverse effects associated with high temperature surface passivation can be effectively suppressed by this low temperature surface passivation process. (C) 2013 The Electrochemical Society.