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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-08-27

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：Scopus、EI、SCIE

卷号：101

期号：9

ISSN号：0003-6951

摘要：The local breakdown behavior of multicrystalline silicon solar cells occurring at reverse bias voltages of -10 V has been investigated by means of electroluminescence images and temperature dependent current density-voltage (J-V) measurements. Identification of temperature coefficient of breakdown current indicates that Zener effect is the dominating mechanism of the local breakdown (so-called type II breakdown). Investigations of the carrier transport mechanism under forward bias voltage suggest that there exist a large amount of defects in depletion region. The origin of type II breakdown is attributed to the defects in depletion region. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749821]