Indexed by:期刊论文
Date of Publication:2004-04-30
Journal:发光学报
Included Journals:PKU、ISTIC、CSCD
Volume:25
Issue:2
Page Number:143-146
ISSN No.:1000-7032
Key Words:金属有机化学气相沉积;氧化锌;掺杂
Abstract:利用MOCVD方法生长了高质量的ZnO薄膜材料,分别通过N2和NH3对c面和R面蓝宝石衬底上生长的ZnO薄膜材料进行了掺杂行为研究.掺N2时,X射线衍射半峰全宽仅为0.148°,室温光荧光发光峰位于3.29eV,半峰全宽～100meV,电阻率由0.65 Ω·cm增大到5×l04Ω·cm.掺NH3时,X射线衍射峰半峰全宽0.50°,样品为弱p型,电阻率为102Ω·cm,载流子浓度为1.69×1016 cm-3.同时我们还观察到弱p型材料很容易退化成n型高阻材料.
Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Gender:Male
Alma Mater:吉林大学
Degree:Doctoral Degree
School/Department:集成电路学院
Discipline:Circuits and Systems. Microelectronics and Solid State Electronics
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