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论文类型：期刊论文

发表时间：2018-07-01

发表刊物：IEEE TRANSACTIONS ON ELECTRON DEVICES

收录刊物：SCIE

卷号：65

期号：7

页面范围：2932-2938

ISSN号：0018-9383

关键字：Charge compensation phototransistor; CMOS image sensor (CIS); high-dynamic range (HDR)

摘要：This paper presents a charge compensation phototransistor for high-dynamic-range CMOS image sensors (CIS). With a built-in charge compensation mechanism, the photoresponse of the proposed device can switch between the linear mode and the logarithmic mode automatically, according to the incident light intensity. In particular, the device does not saturate until approximately 0.5 W/cm(2), almost 5 times the brightness of the sun. Therefore, CIS with this proposed phototransistor demonstrates a measured dynamic range of 167 dB, and an output swing of more than 2 V without amplification. The nonideal behavior of the proposed device due to the thermal effect and the parasitic resistances is investigated when exposed with high incident light intensity. In addition, the nonuniform response of the pixel array is exhibited and analyzed.