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论文类型：期刊论文

发表时间：2008-08-11

发表刊物：JOURNAL OF MATERIALS PROCESSING TECHNOLOGY

收录刊物：SCIE、EI、Scopus

卷号：204

期号：1-3

页面范围：481-485

ISSN号：0924-0136

关键字：photoluminescence; metalorganic chemical vapor deposition; zinc oxide films; p-type doping; light-emitting devices

摘要：N-doped ZnO films have been grown on (0 0 0 1) sapphire substrates by a novel low-pressure plasma-assisted metalorganic chemical vapor deposition system using N2O plasma as doping source. X-ray photoelectron spectroscopy analysis confirmed the incorporation of N into the ZnO films. Room temperature p-type conduction was achieved for the N-doped ZnO film at suitable substrate temperatures, with the resistivity of 8.71 Omega cm, hole concentration up to 3.44 x 10(17) cm(-3) and mobility of 2.09 cm(2)/Vs. In the photoluminescence (PL) measurement, a strong near-band-edge emission was observed for both undoped and N-doped films, while the deep-level emission was almost undetectable, which confirmed that the obtained ZnO-based films were well close to stoichiometry and of optically high quality. (C) 2008 Elsevier B.V All rights reserved.