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个人信息Personal Information
副教授
硕士生导师
性别：男
毕业院校：吉林大学
学位：博士
所在单位：光电工程与仪器科学学院
办公地点：大连理工大学 厚望楼 401室
电子邮箱：jianxundai@dlut.edu.cn
扫描关注
Improved breakdown voltage and dynamic Ron characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure
点击次数：
发表时间：2024-11-29
发表刊物：JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷号：58
期号：4
ISSN号：0022-3727
关键字：ALGAN/GAN MIS-HEMTS; ELECTRON-MOBILITY TRANSISTORS; MECHANISMS; RESISTANCE
上一条：Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers
下一条：A novel metabolite-interacting protein (MIP)-based molecular subtyping construction and validation of IGFBP3 as a MIP-related oncogene in colorectal cancer