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论文类型：期刊论文

发表时间：2002-01-01

发表刊物：Wuli Xuebao/Acta Physica Sinica

收录刊物：Scopus、PKU、ISTIC

卷号：51

期号：1

页面范围：123-124

ISSN号：10003290

摘要：Iron-silicide films have been synthesized by metal vapor vacuum arc (MEVVA) ion implantation of iron into (111) and (100) oriented silicon wafers. The structure evolution was characterized using transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The   -FeSi2 films and buried layers with different depth and thickness were obtained by adjusting the implantation energy and dose. The formation of a,   ,    and CsCl-FeSi2 phases have been observed. The phase transition order is   -FeSi2    -FeSi2    -FeSi 2, CsCl-FeSi2    -FeSi2    -FeSi2 or   -FeSi2    -FeSi2. An amorphous layer was formed at 60 kV and 4    1017 ions/cm2, the phase transition order is amorphous    -FeSi2    -FeSi2. The morphology and position of the silicide films change with the annealing temperature. The silicide grains grow with increasing annealing temperature with further increase of temperature, the continuous silicide layers shrink into isolated islands and the interface   -FeSi2/Si becomes rougher. In this paper, the complicated orientation relationships existing between   -FeSi2 and Si were also investigated.