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论文类型：期刊论文

发表时间：2010-10-01

发表刊物：THIN SOLID FILMS

收录刊物：SCIE、EI、Scopus

卷号：518

期号：24,SI

页面范围：7390-7393

ISSN号：0040-6090

关键字：beta-FeSi2; Magnetron sputtering; Iron silicon film; Microstructure

摘要：The preparation of iron-silicon films was performed onto Si (100) substrates by microwave electron cyclotron resonance (ECR) plasma source enhanced unbalance magnetron sputtering. The compositions, microstructures and properties of films under different sputtering powers and annealing conditions were characterized by AES, GAXRD, TEM and absorption spectrum techniques. The results described that the amorphous iron silicon films can be easily prepared by unbalance magnetron sputtering. Even the Fe/Si ratio deviated far from 1:2, such as Fe/Si = 1:14.8 or 1:10, the amorphous iron silicon film with semiconductor properties can also be obtained, which suggests that the Fe/Si ratio is not the only factor to determine whether the samples have semiconducting properties in iron silicon amorphous. After annealing at 850 degrees C for 4 h, the microstructure of nanometer beta-FeSi2 embedded into amorphous Si still possesses semiconducting characteristics. (C) 2010 Elsevier B.V. All rights reserved.