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论文类型：期刊论文

发表时间：2017-01-25

发表刊物：MATERIALS AND MANUFACTURING PROCESSES

收录刊物：SCIE、EI、Scopus

卷号：32

期号：2

页面范围：121-126

ISSN号：1042-6914

关键字：Damage; diamond; efficiency; grinding; mechanism; removal; sapphire; subsurface; surface; topography; wafer

摘要：In order to improve machining efficiency of sapphire wafer machining using the conventional loose abrasive process, fixed-abrasive diamond plates are investigated in this study for sapphire wafer grinding. Four vitrified bond diamond plates of different grain sizes (40 mu m, 20 mu m, 7 mu m, and 2.5 mu m) are developed and evaluated for grinding performance including surface roughness, surface topography, surface and subsurface damage, and material removal rate (MRR) of sapphire wafers. The material removal mechanisms, wafer surface finish, and quality of the diamond plates are also compared and discussed. The experiment results demonstrate that the surface material is removed in brittle mode when sapphire wafers are ground by the diamond plates with a grain size of 40 mu m and 20 mu m, and in ductile mode when that are ground by the diamond plates of grain sizes of 7 mu m and 2.5 mu m. The highest MRR value of 145.7 mu m/min is acquired with the diamond plate with an abrasive size of 40 mu m and the lowest surface roughness values of 3.5nm in Ra is achieved with the 2.5 mu m size.