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    高飞

    • 教授     博士生导师   硕士生导师
    • 主要任职:物理学院副院长
    • 性别:男
    • 毕业院校:大连理工大学
    • 学位:博士
    • 所在单位:物理学院
    • 学科:等离子体物理
    • 电子邮箱:fgao@dlut.edu.cn

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    Equivalent circuit effects on mode transitions in H-2 inductively coupled plasmas

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    论文类型:期刊论文

    发表时间:2015-04-01

    发表刊物:PHYSICS OF PLASMAS

    收录刊物:SCIE、EI、Scopus

    卷号:22

    期号:4

    ISSN号:1070-664X

    摘要:It is well known experimentally that the circuit matching network plays an important role in the mode transition behavior of inductively coupled plasmas. To date, however, there have been no reports of numerical models being used to study the role of the matching circuit in the transition process. In this paper, a new two-dimensional self-consistent fluid model that couples the components of an equivalent circuit module is developed to investigate the effects of the equivalent circuit on the mode transition characteristics of an inductively coupled, hydrogen plasma. The equivalent circuit consists of a current source, impedance matching network, reactor impedance, and plasma transferred impedance. The nonlinear coupling of the external circuit with the internal plasma is investigated by adjusting the matching capacitance at a fixed input current. The electron density and temperature as well as the electromagnetic fields all change suddenly, and the E to H mode transition occurs abruptly at a certain matching capacitance as the impedance matching of the external circuit is varied. We also analyze the fields and the plasma characteristics during the transition process, especially for the case of the capacitive E mode. (C) 2015 AIP Publishing LLC.