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个人信息Personal Information
教授
博士生导师
硕士生导师
主要任职：大连理工大学白俄罗斯国立大学联合学院副院长
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：物理学院
学科：凝聚态物理
办公地点：中白学院252
电子邮箱：gaojf@dlut.edu.cn
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- [61]刘立钊, Wang, Lu, 高峻峰, 赵纪军, Gao, Xingfa, Chen, Zhongfang.Amorphous structural models for graphene oxides[J],炭素,2022,50(4):1690-1698
- [62]Chen, Shuai, 高峻峰, Srinivasan, Bharathi M., 张刚, Sorkin, Viacheslav, Hariharaputran, Ramanarayan, Zhang, Yong-Wei.An all-atom kinetic Monte Carlo model for chemical vapor deposition growth of graphene on Cu(11...[J],JOURNAL OF PHYSICS CONDENSED MATTER,2022,32(15):155401-
- [63]Cui, Yi, 高峻峰, Jin, Li, 赵纪军, Tan, Dali, Fu, Qiang, Bao, Xinhe.An Exchange Intercalation Mechanism for the Formation of a Two-Dimensional Si Structure Underne...[J],纳米研究 英文版,2022,5(5):352-360
- [64]Yanxue Zhang, Silvia Nappini, Sankar Raman, Federica Bondino, 高峻峰, Antonio Politano.Assessing the stability of Cd3As2 Dirac semimetal in humid environments: the influence of defects...[J],Journal of Materials Chemistry C,2022,9:1235-
- [65]Zhang, Yanxue, Nappini, Silvia, Sankar, Raman, Bondino, Federica, 高峻峰, Politano, Antonio.Assessing the stability of Cd3As2 Dirac semimetal in humid environments: the influence of defects...[J],JOURNAL OF MATERIALS CHEMISTRY C,2022,9(4):1235-1244
- [66]Han, Nannan, 柳洪盛, Zhang, Junfeng, 高峻峰, 赵纪军.Atomistic understanding of the lateral growth of graphene from the edge of an h-BN domain: towa...[J],Nanoscale,2022,9(10):3585-3592
- [67]高峻峰, 赵纪军.Carbon clusters near the step of Rh surface: implication for the initial stage of graphene nucl...[J],EUROPEAN PHYSICAL JOURNAL D,2022,67(3)
- [68]Han, Yan, Wan, Jian-Guo, Xiaodan, Chang, Yuan, 刘宏升, 高峻峰, Wang, Guang-Hou.Configuration of transition-metal atoms on iridium-doped graphene[J],JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS,2022,54(8)
- [69]Li, Shi-Qi, Qiu, Shi, 刘宏升, 陈茂笃, 高峻峰.Confined Monolayer Ice Between CaF2 (111) and Graphene: Structure and Stability[J],FRONTIERS IN PHYSICS,2022,9
- [70]冉蕾, 侯军刚, Qiu, Shi, Zhai, Panlong, 李竹薇, 高峻峰, Zhang, Xiaomeng, 张博, 王晨, 孙立成.Conformal Macroporous Inverse Opal Oxynitride-Based Photoanode for Robust Photoelectrochemical Wa...[J],JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2022,143(19):7402-7413
- [71]Li, Xiaying, 于洋, He, Lin, Nie, Jiacai, Xiong, Changmin, Dou, Ruifen, Zhang, Shiping, Chen, Shuai, Xingli, 高峻峰, Yong-Wei, 赵纪军, Shen, Xi, Yu, Richeng.Mo Concentration Controls the Morphological Transitions from Dendritic to Semicompact, and to C...[J],ACS Applied Materials Interfaces,2022,11(45):42751-42759
- [72]Li, Fengyu, Yi, Fuzhao, 高峻峰, Zhang, Haijun, Chen, Zhongfang.Modulating the electronic properties of perovskite via sigma-pi interfacial interactions: Acomp...[J],APL Materials,2022,6(11)
- [73]Liu, Xiangjun, 高峻峰, Zhang, Gang, Yong-Wei.MoS2-graphene in-plane contact for high interfacial thermal conduction[J],纳米研究 英文版,2022,10(9):2944-2953
- [74]李鹏, Zhu, Chongyang, Wang, Xiao, Cao, Ke, 黄鸣, Cunning, Benjamin, V, Pang, Jintao, Xu, Wendao, Ying, Yibin, Zhen, Fang, Wenzhang, 韩颖, 杨璐, Ruoff, Rodney S., 高超, Meihui, Xiaoxue, 高峻峰, Liu, Yingjun, Chen, Xianjue, 王彬, 王博.Multifunctional Macroassembled Graphene Nanofilms with High Crystallinity[J],ADVANCED MATERIALS,2022
- [75]Chen, Shuai, 高峻峰, Srinivasan, Bharathi M., 张刚, Sorkin, Viacheslav, Hariharaputran, Ramanarayan, Zhang, Yong-Wei.Origin of ultrafast growth of monolayer WSe2 via chemical vapor deposition[J],npj Computational Materials,2022,5(1):28
- [76]Liu, Xiangjun, 高峻峰, 张刚, 赵纪军, Zhang, Yong-Wei.Remarkable Role of Grain Boundaries in the Thermal Transport Properties of Phosphorene[J],ACS omega,2022,5(28):17416-17422
- [77]Chen, Shuai, 高峻峰, Srinivasan, Bharathi M., 张刚, Yang, Ming, Cha, Jianwei, Wang, Shijie, Chi, Dongzhi, Zhang, Yong-Wei.Revealing the Grain Boundary Formation Mechanism and Kinetics during Polycrystalline MoS2 Growt...[J],ACS Applied Materials Interfaces,2022,11(49):46090-46100
- [78]Xia, Mingyue, 刘宏升, 王璐, Li, ShiQi, 高峻峰, 闫肃, 赵纪军.Robust charge spatial separation and linearly tunable band gap of low-energy tube-edge phosphoren...[J],NANOSCALE ADVANCES,2022,3(15):4416-4423
- [79]柳洪盛, 高峻峰, 赵纪军.Silicene on Substrates: A Way To Preserve or Tune Its Electronic Properties[J],Journal of Physical Chemistry C,2022,117(20):10353-10359
- [80]柳华, 高峻峰, Zhao, J..Silicene on substrates: interaction mechanism and growth behavior[A],3rd International Meeting on Silicene (IMS),2022,491(1)