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多维形状记忆合金耗能阻尼器
2019-03-09 Hits:First Author:Hongnan Li
Disigner of the Invention:Gang Li,孙彤
Application Number:CN201320732994.7
Authorization Date:2013-11-18
Authorization Number:CN203546938U
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Gang Li
Gender:Male
Alma Mater:Dalian University of Technology
Academic Titles:Vice Dean of Faculty of Infrastructure Engineering
Degree:Doctoral Degree
School/Department:School of Civil Engineering
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